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| Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current-Continuous Total Power Dissipation@TC=25 Junction temperature Storage temperature RATING 150 80 6 6 50 200 -55~200 UNIT V V V A W TO-3 Electrical Characteristics Tc=25 SYMBOL VCEO VCER ICEO IEBO ICBO VEBO VCE(sat-1) VCE(sat-2) VCE(sat-3) hFE-1 hFE-2 hFE-3 VBE(on) fT hfe PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Base-emitter breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter On voltages Current Gain-Bandwidth Product Small-Signal Current Gain IC=1A; VCE=5V 10 MHz IC=1A; VCE=5V IC=5A; VCE=5V 35 22 200 IC=5.0A; IB=1.0A 1.5 V VCE=30V; IB=0 VEB=6V; IC=0 VCB=30V; IE=0 2.0 1.0 1.0 mA mA mA CONDITIONS IC=0.2A; IB=0 MIN 80 TYP MAX UNIT V JMnic |
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